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机译:
Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA;
Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USADepartment of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA;
机译:Transport and quantum electron mobility in the modulation Si δ-doped pseudomorphic GaAs/In_(0.2)Ga_(0.8)As/Al_(0.2)Ga_(0.8)As quantum well grown by metalorganic vapor phase epitaxy
机译:在塑料基板上印刷有In_(0.2)Ga_(0.8)As / GaAs / In_(0.2)Ga_(0.8)As三层纳米膜的可弯曲MOS电容器
机译:Carrier depletion by defects levels in relaxed In_(0.2)Ga_(0.8)As/GaAs quantum-well Schottky diodes
机译:具有复合IN_(0.8)GA_(0.2)的变形HFET,如GaAs衬底上的通道/ INA / IN_(0.8)GA_(0.2)
机译:形成蓝色LED八周期In0.2Ga0.8N / GaN量子阱的软约束电势的生长顺序中的量子势垒的最佳硅掺杂层。
机译:GaN,In_(0.05)Ga_(0.95)N和a中的超快载流子弛豫 In_(0.05)Ga_(0.95)/ In_(0.15)Ga_(0.85)N多量子阱