HIGH-EFFICIENCY CLASS-C POWER-AMPLIFIER MODULE

摘要

This paper presents the design of a high-efficiency LDMOS power-amplifier module (PAM) at the 880-MHz band. The nonlinear parameters for the LDMOS FET are obtained through the modified SPICE level-3 static and large-signal analyses. It shows an output power of 30.2 dBm and power-added efficiency (PAE) of 64%, with a transducer power gain of 28.78 dB. In this paper, the harmonic-trap network (HTN) is introduced to maximize the PAE and the winding transmission line (WTL) is adopted to obtain the optimizing output matching point between the output power and PAE.