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A LOW PHASE NOISE DESIGN FOR ULTRAWIDEBAND FREQUENCY SYNTHESIZER

机译:超宽带频率合成器的低相位噪声设计

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A low phase-noise frequency synthesizer design for ultrawideband is demonstrated in a 0.18-μm CMOS process. It combines a low phase-noise voltage-controlled oscillator with two-stage dividers and a switched buffer multiplexer with low layout complexity. Because of the symmetrical independent architecture of this switch buffer design, it can reduce the additional phase noise created by the traditional multiplexer stage. Here, this low phase noise design in three LO bands (8448, 4224, and 2112 MHz) is demonstrated. The measurement shows that in these three LO band, this new structure can achieve phase noise of less than -121 dBc/Hz at 1 MHz offset. The frequency tuning range is 10% while consuming only 52.2 mW from a 1.8-V supply.
机译:在0.18μmCMOS工艺中演示了用于超宽带的低相位噪声频率合成器设计。它结合了具有两级分频器的低相位噪声压控振荡器和布局复杂度较低的开关缓冲器多路复用器。由于此开关缓冲器设计具有对称的独立体系结构,因此可以减少传统多路复用器级产生的额外相位噪声。在此,将演示在三个LO频段(8448、4224和2112 MHz)中的这种低相位噪声设计。测量结果表明,在这三个LO频带中,这种新结构在1 MHz偏移下可以实现小于-121 dBc / Hz的相位噪声。频率调谐范围为10%,而1.8V电源仅消耗52.2mW。

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