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A DUAL-BAND CROSS-COUPLED OSCILLATOR USING THE VARACTOR-SWITCHING MODE TECHNIQUE

机译:使用变阻器切换模式技术的双频交叉耦合振荡器

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摘要

A dual-band cross-coupled oscillator is proposed to operate at 5 and 9 GHz. The oscillator consists of two cross-coupled BiCMOS oscillators with shared series-tuned LC-tank. In the even-mode, the series-tuned LC-tank takes no part in affecting the oscillation frequency, whereas in the odd-mode, the series-tuned LC-tank plays the role in the oscillation frequency. The proposed oscillator has been implemented with the TSMC 0.18μm SiGe BiCMOS technology and the core power consumption is 2.6 mW at the supply voltage of 0.7 V. The figure of merit is -192/-190 dBc/Hz at high-/low-band. The die area of the dual-band VCO is 1.04×0.755 mm~2.
机译:提出了一种双频交叉耦合振荡器,其工作频率为5 GHz和9 GHz。该振荡器由两个交叉耦合的BiCMOS振荡器和共享的串联调谐LC储罐组成。在偶数模式下,串联调谐的LC-tank不影响振荡频率,而在奇数模式下,串联调谐的LC-tank在振荡频率中起作用。拟议的振荡器已采用TSMC0.18μmSiGe BiCMOS技术实现,在0.7 V的电源电压下核心功耗为2.6 mW。在高/低频带处,品质因数为-192 / -190 dBc / Hz 。双频压控振荡器的芯片面积为1.04×0.755 mm〜2。

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