SINGLE-/MULTIBAND CMOS LOW-NOISE AMPLIFIER USING CONCENTRIC SWITCHING INDUCTORS

摘要

In this article, a low-noise amplifier (LNA) using concentric switching inductors were designed and measured. A voltage supply is fed through the switching inductors. The presented circuit is a modified cascoded amplifier configuration which input stage is a common-gate structure. The switching inductors are implemented by three series-wound concentric planar spiral inductors associated with two PMOSFET switches. According to on or off state of two PMOSFET switches, the circuit has theoretically four transfer characteristics, including one single-band, two dual-band, and one triple-band frequency responses. For the LNA, using the concentric-type switching inductors, the simulated and measured gains are nearly more than 12 and 10 dB at all operation frequency bands, respectively. The measured reflection coefficients are almost less than -10 dB at all operation frequency bands. The measured minimum noise figures are almost less than 4.5 dB at all operation frequency bands. The power consumption is 9 mW. The chip size is 1.03×1.04 mm~2.