HIGHLY INTEGRATED THREE-DIMENSIONAL SYNTHETIC TRANSMISSION LINE DESIGN ON SILICON SUBSTRATE

摘要

This letter presents a highly integrated three-dimensional synthetic quasi-TEM transmission line (TL) design with high slow-wave factor (SWF). By following the summarized design guidelines, the prototype provides a high flexibility to adjust the structural parameters of the TL for synthesizing the desired guiding properties. Two typical examples of the 35- and 70-X synthetic TLs based on the standard 0.18-μm 1P6M CMOS technology reveal that the SWFs achieve 2.90 and 2.78 at 20.0 GHz, respectively, indicating the increases of 45.0 and 39.0% over than theoretical limit of the quasi-TEM TL.