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首页> 外文期刊>Microporous and mesoporous materials: The offical journal of the International Zeolite Association >Thermal stability of Mesoporous SBA-15 and Sn-SBA-15 Molecular Sieves:An.in situ HTXRD study
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Thermal stability of Mesoporous SBA-15 and Sn-SBA-15 Molecular Sieves:An.in situ HTXRD study

机译:中孔SBA-15和Sn-SBA-15分子筛的热稳定性:原位HTXRD研究

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摘要

Highly ordered SBA-15 and Sn-SBA-15 mesoporous molecular sieves with Si/Sn=80,60,40 and 10 have been prepared through direct synthesis route under milder acidic conditions,which were used for the in situ high temperature X-ray diffraction(HTXRD)studies in the temperature range 298-1573 K for the first time in the literature.SBA-15 is found to be thermally stable up to 1473 K and appearance of alpha-cristobalite was observed at 1573 K also supported by the thermogravimetric(TG)data.A strong negative thermal expansion was observed on heating from 298 to 1573 K(alpha_a=-4.3X10~(-6)K~(-1)).Sn containing samples(Si/Sn=80 and 60)showed a positive thermal expansion(6.75X10~(-6)K~(-1)and 9.04X10~(-6)K~(-1)respectively).On the other hand,the samples with Si/Sn=40 and 10 showed a strong negative thermal expansion(-4.12X10~(-6)K~(-1)and-7.56X10~(-6)K~(-1))similar to SBA-15.The linear thermal expansion coefficient varied in the order:Si/Sn=60>80>40>0>10.Sn~(4+)ions exhibit both tetrahedral and octahedral coordination depending upon the location of these ions either on the walls of the silica(Si/Sn=80 and 60)or in the corona region of the structure(Si/Sn=40 and 10),respectively.The thermal decomposition of the samples(TG data)is correlated to the thermal expansion behavior(HTXRD data).The decomposition behavior of template ions located within the pores is strongly influenced by the presence of Sn in the framework and a'soft'interaction probably exists between the template ions and the Sn sites.
机译:通过在温和的酸性条件下通过直接合成途径制备了Si / Sn = 80、60、40和10的高序SBA-15和Sn-SBA-15介孔分子筛,用于原位高温X射线文献首次首次在298-1573 K的温度范围内进行了衍射(HTXRD)研究.SBA-15在高达1473 K的温度下具有热稳定性,并且在1573 K的温度下观察到α-方英石的出现,这也得到了热重的支持(TG)数据。加热到298至1573 K时观察到强烈的负热膨胀(alpha_a = -4.3X10〜(-6)K〜(-1))。含Sn的样品(Si / Sn = 80和60) Si / Sn = 40的样品显示出正的热膨胀(分别为6.75X10〜(-6)K〜(-1)和9.04X10〜(-6)K〜(-1))。 10具有类似于SBA-15的强烈的负热膨胀(-4.12X10〜(-6)K〜(-1)和-7.56X10〜(-6)K〜(-1))。线性热膨胀系数变化很大顺序为:Si / Sn = 60> 80> 40> 0> 10.Sn〜(4+)离子同时显示四面体和八面体面状配位取决于这些离子在二氧化硅壁上的位置(Si / Sn = 80和60)或在结构的电晕区域(Si / Sn = 40和10)中的位置。样品(TG数据)与热膨胀行为(HTXRD数据)相关。位于孔中的模板离子的分解行为受到骨架中锡的存在的强烈影响,并且模板离子之间可能存在“软”相互作用和锡站点。

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