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机译:
Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden;
Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan;
Tamura Corp, Sayama, Saitama 3501328, JapanNatl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan;
机译:Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy
机译:Electronic structure and magnetic properties in Nitrogen-doped beta-Ga2O3 from density functional calculations
机译:Maximizing the electronic charge carriers in donor-doped hematite under oxygen-rich conditions via doping and co-doping strategies revealed by density functional theory calculations
机译:利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction
机译:Understanding electron-withdrawing substituent effect on structural, electronic and charge transport properties of perylene bisimide derivatives