Identification of the major residual donor in unintentionally doped InP grown by molecular beam epitaxy

摘要

The properties of InP grown unintentionally doped by molecular beam epitaxy are generally limited by residual freehyphen;carrier concentrations (NDminus;NA)sim;1016cmminus;3. By combining two depth profiling techniques, secondary ion mass spectrometry and electrochemical capacitancehyphen;voltage measurements, the single donor impurity responsible for these high freehyphen;electron concentrations has been identified. Conclusive proof is presented which resolves the source of the impurity.