Computational investigation of electron path inside SEM chamber in mirror effect phenomenon

摘要

Present work aims at describe the behaviour of an accelerated probing electron that orientated towards a charged insulator sample and hence producing mirror images. The distribution of the trapped charges at the sample surface is approximated as a point charge. Hence, analytical derivation for the path equation of this electron has been presented. The derived model expresses the probing electron path in terms of the scanning potential, incident angle, trapped charges and the sample relative permittivity. Some of experimental data are import from published literatures so as to justify the introduced procedure. The obtained results have shown that important information could be predictable through the use of this procedure. Hence this procedure may be considered as a tool for describing, analysing and providing hints for further investigation of electron mirror images.