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Resolution limits in radiation temperature measurements using unfiltered photodiodes as detectors

机译:使用未过滤的光电二极管作为检测器的辐射温度测量中的分辨率极限

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摘要

This paper attempts to determine the practical and theoretical resolution limits of black-body (BB) radiation temperature measurements. The calculations were restricted to unfiltered Si, Ge and InSb photodiodes and to the 100℃ to 1500℃ temperature range. A measurement geometry determined by the fixed-point BB construction was used with a view angle of 3° and an observed area of 1 mm~(2). Current best technology for detector long-term noise performance was assumed. The calculations show that the best resolutions are 15 mK to 40 mK for InSb, 6 mK to 15 mK for Ge and 2 mK to 8 mK for Si fullband pyrometers in the temperature ranges 100℃ to 280℃, 280℃ to 500℃ and 500℃ to 1100℃, respectively. These results require very good temperature stabilization (better than 0,01 K) of the detectors.
机译:本文试图确定黑体(BB)辐射温度测量的实际和理论分辨率极限。该计算仅限于未过滤的Si,Ge和InSb光电二极管以及100℃至1500℃的温度范围。使用由定点BB结构确定的测量几何形状,视角为3°,观察面积为1 mm〜(2)。假定使用当前用于检测器长期噪声性能的最佳技术。计算表明,在100℃至280℃,280℃至500℃和500℃的温度范围内,InSb的最佳分辨率为15 mK至40 mK,Ge的最佳分辨率为6 mK至15 mK,Si全波段高温计的最佳分辨率为2 mK至8 mK。 ℃至1100℃。这些结果要求检测器具有非常好的温度稳定性(优于0.01 K)。

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