首页> 外文期刊>Metallurgical and Materials Transactions, A. Physical Metallurgy and Materials Science >Development of Athermal and Isothermal epsilon-Martensite in Atomized Co-Cr-Mo-C Implant Alloy Powders
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Development of Athermal and Isothermal epsilon-Martensite in Atomized Co-Cr-Mo-C Implant Alloy Powders

机译:雾化Co-Cr-Mo-C植入合金粉末中的热和等温ε马氏体的研制

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摘要

In this work, CoCr-Mo compacted powders were sintered at 900 deg C to 1300 deg C for 1 to 2 hours and conditions for total carbide dissolution in fcc cobalt were determined. Accordingly, it was found that sintering at temperatures between 900 deg C to 1100 deg C led to removal of the dendritic structure and to carbide precipitation at the grain boundaries (gbs), as well as in the bulk. Moreover, recrystallization and grain growth were always found to occur during powder sintering. At temperatures above 1100 deg C, no carbide precipitation occurred indicating that carbides were not stable at these temperatures. Hence, compact powders were annealed at 1150 deg C to promote the development of a single-phase fcc solid solution. This was followed by rapid cooling to room temperature and then aging at 800 deg C for 0 to 18 hours. Rapid cooling from 1150 deg C promoted the development of up to 64 pct athermal epsilon-martensite through the face-centered cubic (fcc) -> hexagonal crystal structure (hcp) martensitic transformation. The athermal martensite was associated with the development of a network of parallel arrays of fine straight transgranular markings within the fcc matrix. Moreover, aging at 800 deg C for 15 hours led to the development of 100 pct isothermal hcp s-martensite. From the experimental outcome, it is evident that isothermal s-martensite is the most stable form of the hcp Co phase. Apparently, during aging at 800 deg C, the excess defects expected in athermal martensite are removed by thermally activated processes and by the development of isothermal s-martensite, which has the appearance of "pearlite."
机译:在这项工作中,将CoCr-Mo压实粉末在900℃至1300℃下烧结1至2个小时,并确定了碳化物在fcc钴中的总溶解条件。因此,发现在900℃至1100℃之间的温度下烧结导致树枝状结构的去除以及在晶界(gbs)以及整体上的碳化物沉淀。而且,总是发现在粉末烧结期间发生重结晶和晶粒长大。在高于1100摄氏度的温度下,未发生碳化物沉淀,表明碳化物在这些温度下不稳定。因此,致密粉末在1150摄氏度下退火,以促进单相fcc固溶体的发展。随后快速冷却至室温,然后在800℃老化0至18小时。通过面心立方(fcc)->六方晶体结构(hcp)马氏体相变,从1150℃快速冷却促进了高达64 pct无热ε-马氏体的发展。无热马氏体与fcc基质中细笔直的跨晶标记平行阵列网络的发展有关。此外,在800摄氏度老化15小时导致了100 pct等温hcp s-马氏体的发展。从实验结果来看,显然等温s-马氏体是hcp Co相的最稳定形式。显然,在800℃时效过程中,通过热活化过程和等温s-马氏体的发展消除了无热马氏体中预期的过量缺陷,其外观为“珠光体”。

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