GaAs multiple quantum well microresonator modulators grown on silicon substrates

摘要

We report new results on the modulation characteristics of GaAs/AlGaAs asymmetric Fabry-Perot modulators grown on silicon substrates. We discuss factors affecting device performance and evaluate these by growing p-i-n quantum well diodes, and multilayer reflector stacks on silicon. Using data from these test structures we have designed an asymmetric microresonator modulator and achieve, experimentally, a 40 reflection change with only 5 V and a contrast ratio of 7.4 dB, also with 5 V.