Effects of Substrate Bias Power on the Surface of ITO Electrodes during O_2/CF_4 Plasma Treatment and the Resulting Performance of Organic Light-Emitting Diodes

摘要

During surface treatment using O_2/CF_4 plasma chemistry, the bias power applied to the indium-tin-oxide(ITO) substrate significantly degrades the electrical and optical performance of the organic light emitting diode (OLED) formed on the ITO electrode as a result of the formation of CF_x polymer, In-Sn-F compounds, and structural defects. Application of bias power to the substrate effectively increases the sheath potential over the substrate and thus the flux of CF_x~+ ion created in the O_2/CF_4 plasma, which leads to the production of CF_x polymers as well as structural defects.