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首页> 外文期刊>Metals and Materials International >Effects of Substrate Bias Power on the Surface of ITO Electrodes during O_2/CF_4 Plasma Treatment and the Resulting Performance of Organic Light-Emitting Diodes
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Effects of Substrate Bias Power on the Surface of ITO Electrodes during O_2/CF_4 Plasma Treatment and the Resulting Performance of Organic Light-Emitting Diodes

机译:O_2 / CF_4等离子体处理过程中衬底偏置功率对ITO电极表面的影响以及有机发光二极管的性能

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摘要

During surface treatment using O_2/CF_4 plasma chemistry, the bias power applied to the indium-tin-oxide(ITO) substrate significantly degrades the electrical and optical performance of the organic light emitting diode (OLED) formed on the ITO electrode as a result of the formation of CF_x polymer, In-Sn-F compounds, and structural defects. Application of bias power to the substrate effectively increases the sheath potential over the substrate and thus the flux of CF_x~+ ion created in the O_2/CF_4 plasma, which leads to the production of CF_x polymers as well as structural defects.
机译:在使用O_2 / CF_4等离子体化学技术进行表面处理期间,由于以下原因,施加到铟锡氧化物(ITO)衬底的偏置功率会大大降低形成在ITO电极上的有机发光二极管(OLED)的电和光学性能。 CF_x聚合物,In-Sn-F化合物的形成和结构缺陷。向衬底施加偏置功率有效地增加了衬底上的鞘电势,因此增加了在O_2 / CF_4等离子体中产生的CF_x〜+离子的通量,这导致CF_x聚合物的产生以及结构缺陷。

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