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首页> 外文期刊>optical and quantum electronics >4×8 optoelectronic matrix switch equipment using InGaAsP/InP heterojunction switching photodiodes
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4×8 optoelectronic matrix switch equipment using InGaAsP/InP heterojunction switching photodiodes

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摘要

A four input-port and an eight output-port optoelectronic matrix switch using InGaAsP/InP hetero-junction switching photodiodes was fabricated and its characteristics studied. The characteristics of the broadband switching equipment, as well as those of individual components, such as the switching photodiodes, InGaAsP/InP semiconductor lasers, eight-port optical dividers and receiver circuits, are discussed from the viewpoint of analogue signal switching. The signal-to-noise ratio attained is more than 40dB for a 30MHz bandwidth television signal. Differential gain and differential phase are less than 2 and 2°, respectively, isolation is higher than 80 dB. Crosstalk between adjacent channels is suppressed below-60 dB over the band between d.c. and 100 MHz by a simple metallic shield at the input and output electric circuits

著录项

  • 来源
    《optical and quantum electronics》 |1983年第3期|217-224|共页
  • 作者

    N.Uesugi; S.Machida; T.Kimura;

  • 作者单位

    Nippon Telegraph and Telephone Public Corporation;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

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