Numerical simulation of CuInxGa1 - xSe2 solar cells by AMPS-1D

摘要

In this work, we have used one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D) to design solar cells based on CuIn1 - xGaxSe2 (CIGS) as the absorber material and study their device performances. Starting with a ZnO/In2S3/CIGS solar cell, an inverted surface layer and a grading space charge region (SCR) in the absorber were taken into account. The buffer layer used improves the open-circuit voltage (Voc) without significantly sacrificing the short-circuit current density (Jsc). Photovoltaic parameters were determined using current density–voltage (J–V) curve. Quantum efficiency (QE) is about 94 in the visible range. In2S3 buffer layer have shown to be a competitive alternative to devices with the CdS buffer.