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首页> 外文期刊>Materials science in semiconductor processing >Sulfur stoichiometry driven chalcopyrite and pyrite structure of spray pyrolyzed Cu-alloyed FeS2 thin films
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Sulfur stoichiometry driven chalcopyrite and pyrite structure of spray pyrolyzed Cu-alloyed FeS2 thin films

机译:硫化学计量驱动的铜热喷涂FeS2薄膜的黄铜矿和黄铁矿结构

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摘要

We report on fabrication of CuxFe1-xS2 (CFS) thin films using chemical spray pyrolysis followed by post-sulfurization. Post-sulfurized CFS films were grown with compact and good crystalline texture. The sulfur stoichiometry in CFS films was found to be crucial for determination of its crystal structure. The sulfur deficient CFS films were driven to chalcopyrite CFS (CH-CFS) structure whereas the sulfur cured CFS films were grown with Cu-incorporated pyrite CFS (P-CFS) structure which was confirmed by X-ray diffraction and Raman spectroscopy analysis along with UV-vis spectroscopy measurement. Electrical characterizations of both types of CFS films revealed p-type conductivity with carrier concentration in the range of 10(18)-10(20) cm(-3) and mobility of 0.5-9 cm(2) V-1 s(-1). The band gaps of CFS films of CH-CFS structure (0.885-0.949 eV) were found to be less than that of P-CFS structure (0.966-1.156 eV), which indicates its potential application for thermoelectric and photovoltaic devices. (C) 2015 Elsevier Ltd. All rights reserved.
机译:我们报告使用化学喷雾热解,然后进行后硫化的CuxFe1-xS2(CFS)薄膜的制造。硫化后的CFS薄膜生长时具有致密和良好的晶体质地。发现CFS膜中的硫化学计量对于确定其晶体结构至关重要。缺硫的CFS薄膜被驱动为黄铜矿CFS(CH-CFS)结构,而硫化的CFS薄膜则通过结合有Cu的黄铁矿CFS(P-CFS)结构生长,这通过X射线衍射和拉曼光谱分析以及紫外可见光谱测量。两种类型的CFS薄膜的电学表征均显示出p型电导率,载流子浓度在10(18)-10(20)cm(-3)范围内,迁移率在0.5-9 cm(2)V-1 s(- 1)。发现CH-CFS结构的CFS膜的带隙(0.885-0.949 eV)小于P-CFS结构的带隙(0.966-1.156 eV),这表明其在热电和光伏器件中的潜在应用。 (C)2015 Elsevier Ltd.保留所有权利。

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