Fabrication and characterization of single ZnO microwire Schottky light emitting diodes

摘要

ZnO microwires were grown using noncatalytic chemical vapor deposition method. The average diameter of the ZnO microwires were about 30 mu m with length of up to 1-1.5 cm. Single ZnO microwire Schottky light emitting diode was fabricated using Au as Schottky contact electrode and using Al as ohmic contact electrode. The current-voltage (I-V) characteristics of Schottky diodes reveal good rectifying behavior. The Schottky barrier height and ideality factor were calculated to be 0.78 eV and 4.3, respectively. Furthermore, distinct electroluminescence with ultraviolet and visible emissions was detected from this device at room temperature. (C) 2015 Elsevier Ltd. All rights reserved.