Chalcogen-based thermoelectric power generation device using p-type Bi _(0.4)Sb_(1.6)Se_(2.4)Te_(0.6) and n-type Bi_2Se_(0.6)Te_(2.4) prepared by solid-state microwave synthesis

摘要

This study reports on the fabrication of a chalcogen-based thermoelectric power generation (TEG) device using p-type Bi_(0.4)Sb _(1.6)Se_(2.4)Te_(0.6) and n-type Bi_2Se _(0.6)Te_(2.4) legs. Electrical power generation characteristics were monitored by changing both the temperature conditions and the number of p-n couples required to generate maximum power. The significance of the resistances including the internal resistance and contact resistance between legs and electrodes, are discussed. The maximum output power obtained with the 18 p-n couples device was 273.2 mW under the thermal condition of T _H=523 K hot-side temperature and ΔT=184 K temperature difference.