首页> 外文期刊>Materials science in semiconductor processing >Chalcogen-based thermoelectric power generation device using p-type Bi _(0.4)Sb_(1.6)Se_(2.4)Te_(0.6) and n-type Bi_2Se_(0.6)Te_(2.4) prepared by solid-state microwave synthesis
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Chalcogen-based thermoelectric power generation device using p-type Bi _(0.4)Sb_(1.6)Se_(2.4)Te_(0.6) and n-type Bi_2Se_(0.6)Te_(2.4) prepared by solid-state microwave synthesis

机译:利用固态微波合成法制备的利用p型Bi _(0.4)Sb_(1.6)Se_(2.4)Te_(0.6)和n型Bi_2Se_(0.6)Te_(2.4)的硫属类热电发电装置

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摘要

This study reports on the fabrication of a chalcogen-based thermoelectric power generation (TEG) device using p-type Bi_(0.4)Sb _(1.6)Se_(2.4)Te_(0.6) and n-type Bi_2Se _(0.6)Te_(2.4) legs. Electrical power generation characteristics were monitored by changing both the temperature conditions and the number of p-n couples required to generate maximum power. The significance of the resistances including the internal resistance and contact resistance between legs and electrodes, are discussed. The maximum output power obtained with the 18 p-n couples device was 273.2 mW under the thermal condition of T _H=523 K hot-side temperature and ΔT=184 K temperature difference.
机译:这项研究报告了使用p型Bi_(0.4)Sb _(1.6)Se_(2.4)Te_(0.6)和n型Bi_2Se _(0.6)Te_(的硫属元素基热电发电(TEG)装置的制造2.4)腿。通过改变温度条件和产生最大功率所需的p-n对的数量来监视发电特性。讨论了电阻的重要性,包括支脚和电极之间的内部电阻和接触电阻。在T _H = 523 K热侧温度和ΔT= 184 K温差的热条件下,使用18 p-n耦合器件获得的最大输出功率为273.2 mW。

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