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Microstructural analysis of varistors prepared from nanosize ZnO

机译:纳米ZnO制备的压敏电阻的微观结构分析

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ZnO nanoparticles were prepared by a solid state pyrolysis reaction of zinc acetate dihydrate and oxalic acid dihydrate at 500 deg C. The course of reaction at various temperatures was followed by XRD. Subsequently varistors were fabricated from this nano-ZnO material by solid state mixing with various oxide additives and sintering to 1050 deg C. The icrostructure of the sintered material was studied using XRD, field emission SEM (FESEM), and EDX, and ZnO grains, bismuth rich regions and spinel phases were identified. Discs made from oxide doped nano-ZnO show considerably higher breakdown voltage (656 + - 30 V mm~(-1)) compared to those prepared from micrometre sized ZnO (410 + - 30 V mm~(-1)) and commercial varistors (454 + - 30 V mm~(-1)). However, varistors made from the nano-ZnO show very low densification and high leakage current, making them unsuitable for device fabrication.
机译:ZnO纳米颗粒是通过醋酸锌二水合物和草酸二水合物在500℃下的固态热解反应制备的。XRD跟踪不同温度下的反应过程。随后,通过与各种氧化物添加剂进行固态混合并烧结至1050℃,从这种纳米ZnO材料制成压敏电阻。使用XRD,场发射SEM(FESEM)和EDX和ZnO晶粒研究了烧结材料的微观结构。确定了富铋区和尖晶石相。与用微米级ZnO(410 +-30 V mm〜(-1))和商用压敏电阻制成的光盘相比,用氧化物掺杂的纳米ZnO制成的光盘显示出更高的击穿电压(656 +-30 V mm〜(-1))。 (454 +-30 V mm〜(-1))。然而,由纳米ZnO制成的压敏电阻显示出非常低的致密性和高的漏电流,使其不适合于器件制造。

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