Characterization of low-k porous silica films incorporated with alkylene groups

摘要

Alkylene groups incorporated porous silica films were prepared by using hydrolysis and condensation of BIS (Triethoxysilyl) Ethelene (BTE). BTE and H_2O containing HCl as a catalyst were mixed with organic solvent, 2-Methylpentane-2,4-diol (MPD). FT-IR peaks due to MPD were not observed but Si-C_2H_4-Si related peaks were still observed in the film even after 450 ℃ vacuum annealing. Electric characteristics were evaluated with an MOS structure. K value does not depend on the annealing temperature below 400 ℃; however, it was reduced down to 1.9 at 450 ℃.