首页> 外文期刊>Materials transactions >Effect of Surface Deposits on Nitriding Layer Formation of Active Screen Plasma Nitriding
【24h】

Effect of Surface Deposits on Nitriding Layer Formation of Active Screen Plasma Nitriding

机译:表面沉积物对有源屏等离子体氮化的氮化层形成的影响

获取原文
获取原文并翻译 | 示例
           

摘要

Austenitic stainless steel SUS 316L was nitrided by active-screen plasma nitriding (ASPN) to investigate the effect of surface deposits from the screen on the nitriding layer formation. ASPN experiments were carried out using a DC plasma-nitriding unit. The sample was placed on the sample stage in a floating potential (bias-off) and a cathodic potential (bias-on). The screen, which was SUS 316L expanded metal with 38% open area ratio, was mounted on the cathodic stage around the sample stage. Nitriding was performed in a nitrogen-hydrogen atmosphere with 25% N-2 + 75% H-2 for 18-180 ks at 673 K under 200 Pa by the ASPN process. After nitriding, the nitrided samples were examined using scanning electron microscopy, X-ray diffraction, Vickers microhardness and glow discharge optical emission spectroscopy. From the surface observation of the nitrided sample, deposits were observed on the top surface of the sample nitrided with bias-off whereas deposits were not on that nitrided with bias-on. The nitrogen-expanded austenite (S phase) was formed on the surface of both samples. Layer thickness of the S phase increased with increasing the nitriding time. Additionally, the degree of an increase of the layer thickness of the S phase nitrided with bias-on was approximately 2.5 times greater than that nitrided with bias-off. This result suggests that the ASPN treatment with bias-on is effective for the increase of the nitriding layer thickness.
机译:奥氏体不锈钢SUS 316L通过主动筛分等离子体氮化(ASPN)进行氮化,以研究筛网表面沉积物对氮化层形成的影响。 ASPN实验是使用直流等离子体氮化装置进行的。将样品以浮动电位(偏斜)和阴极电位(偏斜开启)放置在样品台上。筛网是SUS 316L多孔金属,具有38%的开口率,它安装在样品台周围的阴极台上。通过ASPN工艺,在673 K,200 Pa下于25%N-2 + 75%H-2的氮氢气氛中进行18-180 ks的氮化。氮化后,使用扫描电子显微镜,X射线衍射,维氏显微硬度和辉光放电光发射光谱法检查氮化的样品。从氮化样品的表面观察,在偏斜氮化的样品的顶面上观察到沉积物,而偏斜氮化的样品上没有沉积物。在两个样品的表面上都形成了氮膨胀的奥氏体(S相)。 S相的层厚度随着氮化时间的增加而增加。另外,通过偏置接通氮化的S相的层厚度的增加程度大约是通过偏置断开氮化的S相的层厚度的大约2.5倍。该结果表明,通过偏压施加的ASPN处理对于氮化层厚度的增加是有效的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号