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Preferential Growth of Cube-Oriented Grains in Partially Annealed and Additionally Rolled Aluminum Foils for Capacitors

机译:在电容器的部分退火和额外轧制铝箔中,立方取向晶粒的优先生长

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摘要

It is well known that a sharp Cube texture is developed for the producing process of a pure aluminum foil for capacitors. The orientation analysis using scanning electron microscopy/electron backscattered diffraction pattern (SEM/EBSP) method has been performed on the transverse direction (TD) sections of partially annealed (PAed) and additionally rolled (ARed) foils through the thickness in order to reveal how Cube-oriented grains have advantages for growth in comparison with the other grains with orientation components of rolling texture. Samples were annealed repeatedly with increasing the temperature in a vacuum. The Cube grains were distributed throughout foil thickness homogeneously in the PAed and ARed foils. The main mechanism of preferential growth of the Cube grains in the PAed foils was driven by grain boundary energy. However, the growth for ARed foils was caused by strain induced grain boundary migration (SIBM) driven by the difference in stored energy between the Cube and the other grains, because the former store less strain energy than the latter after the additional rolling. Furthermore, the grown-up Cube grains having similar orientations met each other and made a cluster in both the foils. Since the clusters develop to reach the foil surfaces and become stable, the Cube grains are easy to cover all of the foil in the final stage of annealing.
机译:众所周知,在用于电容器的纯铝箔的生产过程中,形成了锐利的立方纹理。已对部分退火(PAed)和另外轧制(ARed)的金属箔的横向(TD)截面进行了扫描电子显微镜/电子背散射衍射图(SEM / EBSP)方法的取向分析,以揭示其厚度与其他具有滚动纹理定向成分的晶粒相比,立方体定向晶粒具有生长优势。样品在真空中随着温度的升高而反复退火。在PAed和ARed箔中,立方体晶粒均匀地分布在整个箔厚度中。 PAed箔中立方体晶粒优先生长的主要机理是由晶界能驱动的。但是,ARed箔的生长是由立方晶格和其他晶粒之间的储能差驱动的应变诱发晶界迁移(SIBM)引起的,因为在额外轧制后,前者比后者储存的应变能要少。此外,具有相似取向的长大的立方晶粒彼此相遇并且在两个箔中均成簇。由于团簇发展到到达箔表面并变得稳定,因此在退火的最后阶段,立方体晶粒易于覆盖所有箔。

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