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机译:
Hexagonal sic polytypes; Silicon-carbide; Band-structure; Power devices; Single-crystals; Growth;
机译:Stacking fault formation in highly doped 4H-SiC epilayers during annealing
机译:Stacking faults in intrinsic and N-doped 4H-SiC: True influence of the N-doping on their multiplicity
机译:Defects created in N-doped 4H-SiC in the brittle regime:Stacking fault multiplicity and dislocation cores
机译:通过TEM技术,脱位核心重建和图像对比度分析的N-DOPED 4H-SiC中部分脱位的核心组成
机译:Development of Triple-stacked Image sensor with Highly Efficient Organic photoconductive Films