Lateral spread of ionhyphen;implanted impurities in silicon

摘要

A technique for measuring the overlaps of the gate electrodes of fieldhyphen;effect structures is described. Ionhyphen;implanted selfhyphen;aligned gate FET structures were used to evaluate the lateral spread of lowhyphen;energy (RP0.1 mgr;m) highhyphen;dosage (5times;1015sol;cm2) phosphorus and boron implantations and was found to be less than 10minus;5cm. Sheet resistance of the implanted region can also be evaluated by this technique. Some series resistance effects associated with inadequate annealing as well as twohyphen;dimensional field aspects on the threshold voltage associated with short channel devices in this experiment were observed.