Damage profile determination of ionhyphen;implanted Si layers by ellipsometry

摘要

The damage profile in P+hyphen;ionhyphen;implanted Si is investigated by ellipsometry. Ellipsometric data are analyzed based on a threehyphen;layer model, i.e., SiO2surface layerndash;implantationhyphen;induced amorphous Si (ahyphen;Si) layerndash;crystal Si (chyphen;Si) substrate. Theahyphen;Si layer thickness is estimated for three implantation energies, 100, 50, and 30 keV at a fixed dose of 5times;1015cmminus;2. It is shown that a consistent interpretation of the data is possible taking into account the finitehyphen;width transition region betweenahyphen;Si andchyphen;Si. Assuming the transition layer to be random mixtures ofahyphen;Si andchyphen;Si particles, the optical constant distribution in the transition layer is calculated using the effective medium theory for small particle composites. This model is used to estimate transition layer width.