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首页> 外文期刊>Macromolecular symposia >High-K and Low Loss Bi1.5Zn1.0Nb1.5O7/Polyimide Composite Films for Application in Embedded Capacitors
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High-K and Low Loss Bi1.5Zn1.0Nb1.5O7/Polyimide Composite Films for Application in Embedded Capacitors

机译:高K低损耗Bi1.5Zn1.0Nb1.5O7 /聚酰亚胺复合薄膜,用于嵌入式电容器

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摘要

We report on the role of Bi1.5Zn1.0Nb1.5O7 (BZN) ceramic fillers in notably reducing the dielectric loss of BZN/polyimide composite films manufactured for application in flexible RF embedded capacitors. The composite films were synthesized using a colloidal process. INAAT (isopropyl tris(N-amino-ethyl aminoethyl)titanate) was used as a coupling agent for homogeneous dispersion of BZN particles into a polyimide matrix. The BZN/polyimide composite films (BZN content at 50 Vol%) exhibited a low dielectric loss of 0.0369 at 12 MHz while retaining a high dielectric constant of 14.75.
机译:我们报告了Bi1.5Zn1.0Nb1.5O7(BZN)陶瓷填料在显着降低为柔性RF嵌入式电容器制造的BZN /聚酰亚胺复合膜的介电损耗中的作用。使用胶体工艺合成了复合膜。 INAAT(异丙基三(N-氨基-乙基氨基乙基)钛酸酯)用作将BZN颗粒均匀分散到聚酰亚胺基质中的偶联剂。 BZN /聚酰亚胺复合膜(BZN含量为50 Vol%)在12 MHz时表现出0.0369的低介电损耗,同时保持14.75的高介电常数。

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