Temperature dependence of impact ionization coefficients in InP

摘要

Impact ionization coefficients for electrons and holes in InP were measured experimentally at 25ndash;175thinsp;deg;C in the 400ndash;600 kV/cm electric field range with planar avalanche photodiodes, in which thenhyphen;InP avalanche region was separated from the light absorbing InGaAs and/or InGaAsP layers. agr; and bgr; monotonically decreased with elevated temperatures; bgr;/agr; slightly decreased with increasing temperature. Comparison of the experimental results with Okutondash;Crowell formula on the impact ionization coefficient gave the phonon energyERO=46 meV and the phonon scattering mean free path lgr;0=41.7 Aring; for electron impact ionization andERO=36 meV and lgr;0=41.3 Aring; for hole impact ionization, respectively. Curves calculated by using these parameters agree with the experimental results quite satisfactorily at each temperature.