Analysis of Insulating Materials and Deep Interfaces by Auger Electron Spectroscopy

摘要

Auger electron spectroscopy (AES) is a powerful tool for investigating the composition of minute particles and thin films as well as the compositional distribution of elements in the depth direction of multilayered films and metallic-bonded interfaces. However, non-conductive materials are generally difficult to analyze because of the charge-up phenomenon generated by the exciting electron beam. Furthermore, in a "depth profiling" analysis performed simultaneously with sputter etching, if the target analysis site is deep beneath the sample surface, the depth resolution is degraded by effects such as surface roughness and mixing, so precise evaluation is difficult. To solve these problems, we have investigated an AES analysis technique that uses a thin sample processed by a focused ion beam. It enables measurement free from charge-up even if the sample is composed of insulating material and achieves depth profiling with outstanding resolution even at analysis sites (such as interfaces) deep within the sample.