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首页> 外文期刊>Ferroelectrics: Letters Section >THE SYNTHESIS MECHANISM OF COMPLEX OXIDE FILMS FORMED IN DENSE RF - PLASMA BY REACTIVE SPUTTERING OF STOICHIOMETRIC TARGETS
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THE SYNTHESIS MECHANISM OF COMPLEX OXIDE FILMS FORMED IN DENSE RF - PLASMA BY REACTIVE SPUTTERING OF STOICHIOMETRIC TARGETS

机译:活性化学计量比靶形成致密RF等离子体的复合氧化物膜的合成机理。

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摘要

The paper presents new experimental data on the synthesis and crystallization of complex oxide films produced by rf sputtering of ceramic targets. The deposition system has threshold states, the transition through which sets off a qualitative modification of its properties. The main feature of this modification is the appearance of a new structured system in plasma.
机译:本文介绍了通过射频溅射陶瓷靶产生的复合氧化物膜的合成和结晶的新实验数据。沉积系统具有阈值状态,通过该阈值状态可以对其特性进行定性修改。这种修改的主要特征是等离子体中新结构化系统的出现。

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