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DC BIASED DIELECTRIC PROPERTY OF MPB PZT CERAMICS WITH MONOCLINIC DISTORTION AT LOW TEMPERATURES

机译:低温下具有单斜畸变的MPB PZT陶瓷的直流偏置介电性能

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摘要

Complex dielectric properties of PbZr_(1-X)Ti_xO_3 ceramics with compositions in the vicinity of the morphotropic phase boundary (x=0.46, 0.48, and 0.51), as a function of dc bias fields, were measured under small ac signal conditions. In monoclinic phase, dielectric permittivity shows hysteresis behavior and decreases with increasing bias field when E_(bias)>BC. For compositions of tetragonal phase and near the on-set of the monoclinic phase transitions, dielectric permittivity increases with increasing bias electric field, indicating a continued polarization switching process. Such anomalous behavior is attributed to the B-field induced monoclinic phase, which allows polarization rotation without domain reversal. Temperature dependence of the dc biased dielectric property between 12K and 300K is also reported. Dielectric dispersion is mostly clamped out for both PZT 54:46 and PZT 52:48 as temperatures approaching 12K; however, remains significant in PZT 49:51.
机译:在直流信号场较小的情况下,测量了PbZr_(1-X)Ti_xO_3陶瓷的介电常数(x = 0.46、0.48和0.51)在其同质相界附近,其复介电特性随直流偏置场的变化而变化。在单斜相中,当E_(bias)> BC时,介电常数显示出磁滞行为,并且随着偏压场的增加而降低。对于四方相和接近单斜相转变开始的成分,介电常数随偏置电场的增加而增加,表明持续的极化转换过程。这种异常行为归因于B场诱导的单斜晶相,它允许极化旋转而没有畴反转。还报道了直流偏置介电特性在12K和300K之间的温度依赖性。当温度接近12K时,PZT 54:46和PZT 52:48的介电色散大部分都被限制。但是,在PZT 49:51中仍然很重要。

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