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首页> 外文期刊>Ferroelectrics: Letters Section >FREQUENCY AGILE BST THIN FILMS FOR RF/MICROWAVE APPLICATIONS
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FREQUENCY AGILE BST THIN FILMS FOR RF/MICROWAVE APPLICATIONS

机译:射频/微波应用的频率捷变BST薄膜

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摘要

Heteroepitaxial Ba_(0.6)Sr_(0.4)O_3 thin films of varying thickness (approx 22-270 nm) were deposited on (100) oriented LaAlO_3 single crystal substrates by pulsed laser deposition using a KrF excimer laser (lambda= 248 nm). XRD and FESEM were used to determine the structural quality, while RBS was used to investigate the chemical composition and thickness. The stoichiometry was found to be ideal with a Ba:Sr ratio of 1.5. XRD omega-scans showed that all films were epitaxial with a FWHM of 0.40 deg. Interdigitated electrodes were used to measure the capacitance and Q-factor of the films in the range of 1 GHz to 20 GHz. The films exhibited a capacitance of 0.156-0.463 pF at room temperature, with Q-factors in the range of 4-20, depending on frequency. The tunability of BST was also measured at microwave frequencies and found to be up to 38 percent at 10 GHz, for the thickest sample.
机译:通过使用KrF受激准分子激光器(λ= 248nm)的脉冲激光沉积在(100)取向的LaAlO_3单晶衬底上沉积变化厚度(约22-270nm)的异质外延Ba_(0.6)Sr_(0.4)O_3薄膜。 XRD和FESEM用于确定结构质量,而RBS用于研究化学成分和厚度。发现化学计量比是理想的,Ba∶Sr比为1.5。 XRDΩ扫描显示所有薄膜都是外延的,FWHM为0.40度。叉指电极用于测量1 GHz至20 GHz范围内的薄膜的电容和Q因子。薄膜在室温下的电容为0.156-0.463 pF,Q因子在4-20范围内,具体取决于频率。 BST的可调性也在微波频率下测量,对于最厚的样品,在10 GHz时高达38%。

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