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首页> 外文期刊>Ferroelectrics: Letters Section >Auger Analysys of PbTiO_3 Films Prepared by Reactive Electron Beam Coevaporation
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Auger Analysys of PbTiO_3 Films Prepared by Reactive Electron Beam Coevaporation

机译:反应电子束蒸发制备的BaTiO3薄膜的俄歇分析

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摘要

Auger electron spectroscopy was applied to studydepth profiles of PbTiO_3 thin films which were prepared bycoevaporation with high deposition rate of 50nm/min and withsubstrate temperature of 550 deg C. When the films weredeposited on sputtered Pt films, Pb was concentrated on the Ptsurface and PbPt_x was formed. On the contrary, a perovskitephase of PbTiO_3 was obtained without post thermal annealing ona sputtered 1 percent Te-added indium tin oxide (S-ITO) substrate.Chemical composition of the film on S-ITO was not dependent ondepth excepting surface region.
机译:采用俄歇电子能谱技术研究了共蒸发制备的PbTiO_3薄膜的深度分布,其蒸镀速率为50nm / min,衬底温度为550℃。当薄膜沉积在溅射的Pt薄膜上时,Pb集中在Pt表面,PbPt_x为形成。相反,在溅射后的1%掺Te的铟锡氧化物(S-ITO)衬底上,无需进行后热退火即可获得PbTiO_3的钙钛矿相。S-ITO上薄膜的化学组成除表面区域外,不取决于深度。

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