Effects of In Situ Heat Treatment on the Microstructure and Electronic Properties of Ba0.6Sr0.4TiO3 Thin Films

摘要

Ba0.6Sr0.4TiO3 (BST) thin films were deposited on Pt/Ti/SiO2/Si substrates by a RF-magnetron sputtering. The film crystallinity was influenced by the in situ heat treatment. The surface images, dielectric and ferroelectric properties of the thin films were investigated. The BST thin films deposited at 400 degrees C were crystallized after heat treatment over 500 degrees C for 20 minutes. The high dielectric constant of 320 and dielectric tunability of 30% was achieved in the BST thin films while the dielectric loss was less than 0.05 by adjusting the annealing temperature. And the thin films exhibited strong ferroelectric property when the film thickness was over 90 nm.