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Experimental study of carrier transport in multi-layered structures

机译:多层结构中载流子输运的实验研究

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摘要

Gate stress measurements are applied to Flash cell array structures. The counter intuitive V_t shift is associated to the charge redistribution in the ONO layer. This redistribution of charge follows Poole-Frenkel conduction mechanisms. In multi-level Flash, the total charge in the nitride layer need to be minimized, and well-controlled, in order to achieve good data retention of the device.
机译:栅极应力测量应用于闪存单元阵列结构。与直觉相反V_t偏移与ONO层中的电荷重新分布有关。这种电荷的重新分配遵循普尔-弗伦克尔传导机制。在多级闪存中,氮化物层中的总电荷需要最小化并得到很好的控制,以实现器件的良好数据保留。

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