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首页> 外文期刊>Bulletin of the Korean Chemical Society >Temperature-dependent Energy Transfer in Mn-doped CdS/ZnS Nanocrystals
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Temperature-dependent Energy Transfer in Mn-doped CdS/ZnS Nanocrystals

机译:Mn掺杂CdS / ZnS纳米晶体中随温度变化的能量转移

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摘要

Temperature dependence of the exciton and luminescence intensities in Mn-doped CdS/ZnS quantum dots (QDs) emitting both exciton and dopant luminescence simultaneously was studied in the temperature range 77-320 K. With increasing temperature, exciton luminescence intensity decreased as a result of the increased charge carrier trapping, similar to the usual undoped QDs. In contrast, the sensitized Mn luminescence intensity increased with increasing temperature despite the decrease in the exciton population available for the sensitization. The observed opposite temperature dependence of the exciton and Mn luminescence indicates that the exciton-Mn energy transfer rate should increase with temperature significantly more rapidly than the charge carrier trapping. Temperature shift of the bandgap of the host QD and the energy of accepting d-d transition, resulting in the variation of the donor-acceptor spectral overlap, is considered responsible for the large temperature dependence of the energy transfer rate in Mn-doped QDs.
机译:研究了在77-320 K的温度范围内同时发射激子和掺杂剂发光的Mn掺杂CdS / ZnS量子点(QDs)中激子的发光强度与温度的关系。随着温度的升高,激子的发光强度由于电荷载流子陷阱的增加,类似于通常的未掺杂量子点。相反,尽管可用于敏化的激子数量减少,但敏化的Mn发光强度随温度升高而增加。观察到的激子和Mn发光的相反温度依赖性表明,激子-Mn能量转移速率随温度的增加应比电荷载流子俘获的速度更快。主机量子点的带隙温度变化和接受d-d跃迁的能量导致施主-受体光谱重叠的变化,被认为是锰掺杂量子点中能量传递速率的较大温度依赖性。

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