Carrier trapping in thin N_2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

摘要

A detailed study of the carrier trapping properties shown by the silicon/oxynitride/oxide gate layers in PowerVDMOS technologies is reported. A quantitative analysis of hole and electron trap densities versus the specific N_2O based nitridation process, extracted from Fowler-Nordheim constant current stress kinetics, allows a deep understanding of the role played by those defects in the susceptibility of every nitrided layer.