MOS transistor reliability under analog operation

摘要

Reliability evaluation for MOS transistors under analog operation requires different or specifically adapted approaches compared to the ones known from the digital world. Focussing on the particular analog operating conditions and the related lifetime criteria, a comprehensive discussion is performed of MOSFET reliability taking into account channel hot-carrier stress, bias temperature instabilities, and oxide wear-out. The conditions for the occurrence of these mechanisms and criteria for stress induced malfunction of analog circuits are discussed and the physics behind the behavior of typical analog device parameters after stress are addressed. Furthermore, specific aspects concerning the definition of analog lifetime criteria and strategies to guarantee reliability by means of circuit design are considered.