Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates

摘要

Electron irradiation induced damage in diodes fabricated on germanium-doped and non-germaniumdoped Czochralski (CZ) silicon substrates is studied. In general, both the reverse and forward currentincrease by irradiation. An interesting observation is, however, that the forward current decreases after 1017 e/cm~2 irradiation for a forward voltage larger than～0.7 V. This reduction can be explained by an increased resistivity of the substrate. After irradiation, the capacitance decreases due to deactivation of the phosphorus dopant. From IV and CV characteristics, there is a limited difference between the effect of electron irradiation of CZ-SiGe and CZ-Si based diodes.