New FIB/TEM evidence for a REDR mechanism in sudden failures of 980 nm SL SQW InGaAs/AlGaAs pump laser diodes

摘要

FIB/TEM images of failed laser diodes showed features compatible with local fusion and recrystallization around extended defect of the strained active layer. The shape of the melted area calls for excess temperature along single straight lines, compatible with misfit dislocations. This uniquely defines the sequence of defect propagation and interaction, pointing to the validation of the REDR theory for intrinsic origin of sudden failures.