The 1/f noise of various InGaAs layers lattice matched to InP is investigated systematically at room temperature. To elucidate the origin of the 1/f noise in this type of III-V compound semiconductor, thick n-type doped InGaAs layers, typical InP based InAlAs/InGaAs or InP/InGaAs heterostrucuture field-effect transistor (HFET) structures, respectively, as well as InP based InAlAs/InGaAs quantum well structures with doped InGaAs two-dimensional electron gas (2DEG) channel are analysed. From the experiments it is found that mobility fluctuation is the only origin for the 1/f noise observed both in InGaAs bulk material and in 2DEG heterostructures of high quality. A Hooge parameter attributed to phonon scattering α{sub}(H phon) in the bulk material is found to be about 7 × 10{sup}(-6) and agrees with those obtained from HFET structures with the highest mobilities (α{sub}H ≈1.5 × 10{sup}(-5)). Furthermore, the Hooge parameter of 2DEG structures strongly depends on the channel design and on the doping concentration in the n-type doped 2DEG channels.
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