Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies

摘要

Fundamental studies related to the low-frequency (LF) noise performance in semiconductors started more than 40 years ago. In 1957, McWhorter published the first model for the 1/f noise in semiconductors, which is still in use. Whereas for many decades LF noise studies were mainly of fundamental and theoretical interests, in recent years, LF noise characterisation has become a very valuable diagnostic technique for the development of semiconductor materials and devices. Especially, the use of noise characterisation as a tool for reliability predictions has triggered the semiconductor engineering society. Not only the silicon starting material, but also many of the used process modules have a strong impact on the noise performance. This trend is becoming even more pronounced for the advanced deep-submicron technologies. For analog applications of scaled technologies, LF noise may even act as a showstopper. This review, therefore, focuses on the impact of advanced processing on the low-frequency noise behaviour. Both front- and back-end process modules are discussed.