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New approach towards imaging lambda-DNA using scanning tunneling microscopy/spectroscopy (STM/STS)

机译:使用扫描隧道显微镜/光谱法(STM / STS)对λ-DNA成像的新方法

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摘要

A new methodology to anchor lambda-DNA to silanized n-Si(lll) surface using Langmuir Blodget trough was developed. The n-Si (111) was silanized by treating it with low molecular weight octyltrichlorosi-lane in toluene. Scanning tunneling microscopy (STM) image of lambda-DNA on octyltrichlorosilane deposited Si substrate shows areas exhibiting arrayed structures of 700 nm length and 40 nm spacing. Scanning tunneling spectroscopy (STS) at different stages depict a broad distribution of defect states in the bandgap region of n-Si(lll) which presumably facilitates tunneling through otherwise insulating DNA layer.
机译:开发了一种使用Langmuir Blodget槽将lambda-DNA锚定在硅烷化的n-Si(III)表面的新方法。通过用低分子量的辛基三氯硅烷在甲苯中处理n-Si(111)使其硅烷化。辛基三氯硅烷沉积的Si基板上的lambda-DNA的扫描隧道显微镜(STM)图像显示区域显示出700 nm长和40 nm间距的阵列结构。扫描隧道光谱法(STS)在不同阶段描绘了n-Si(III)带隙区域中缺陷状态的广泛分布,这大概有助于通过其他绝缘的DNA层进行隧道。

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