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An efficient method combining thermal annealing and acid leaching for impurities removal from silica intended for photovoltaic application

机译:一种将热退火和酸浸相结合的有效方法,可从拟用于光伏应用的二氧化硅中去除杂质

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This work investigates the photothermal treatment of silica sand to reduce impurities to a low level suitable for the production of acceptable solar grade silicon for photovoltaic application. It describes experiment carried out by using a tungsten lamp furnace to purify silica under controlled atmosphere. This process enables to attract impurities to the surface of silica grains where they can be easily extracted by partial dissolution in an acid mixture. Thus obtained silica was investigated by inductively coupled plasma atomic emission spectrometry (ICP-AES) method. Major impurities present in silica sand were Al, K, Fe, Na, Ca, Mg and B. Among the new products, almost major impurities were removed effectively. Indeed purity degree, given by characterization of ICP-AES, passes from 99.76 to 99.96% and the average impurity removal efficiency is 83.33%.
机译:这项工作研究了硅砂的光热处理,以将杂质减少到适合生产光伏应用可接受的太阳能级硅的低水平。它描述了通过使用钨灯炉在受控气氛下纯化二氧化硅而进行的实验。该方法能够将杂质吸引到二氧化硅颗粒的表面,在其中可以通过部分溶解在酸混合物中而容易地将它们提取出来。通过电感耦合等离子体原子发射光谱法(ICP-AES)研究由此获得的二氧化硅。硅砂中存在的主要杂质是Al,K,Fe,Na,Ca,Mg和B。在新产品中,几乎有效去除了主要杂质。确实,由ICP-AES表征得出的纯度从99.76降至99.96%,平均杂质去除效率为83.33%。

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