35 GHz DIELECTRIC RESONATOR STABILISED GUNN OSCILLATOR

摘要

A 35 GHz dielectric resonator oscillator(DRO) using GaAs Gunn diode in microstrip configuration has been designed and developed. The oscillator, with an integral waveguide-to-microstrip transition, delivered an output greater than 18 dBm. Phase noise of the oscillator is found to be better than -80 dBc/Hz at 100 KHz away from the carrier. A frequency drift of about ± 25 MHz has been observed over the temperature range from -10 °C to 50 °C.