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Investigations of the OH~- absorption bands in congruent and near-stoichiometric LiNbO_3:Hf crystals

机译:全同和近化学计量的LiNbO_3:Hf晶体中OH〜-吸收带的研究

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摘要

OH~- absorption bands of both congruent and near-stoichiometric LiNbO_3:Hf crystals were investigated. The abrupt blueshift of OH ~- absorption bands was found between the doping levels of 2 and 2.5mol% in the congruent crystals, which confirms the exact optical-damage threshold for Hf doping. The absorption difference of OH ~- bands between the congruent and near-stoichiometric crystals shows that after Li incorporation H~+ ions no longer prefer the sites of 3500 cm ~(-1). Moreover, with the increase of Hf doping in the near-stoichiometric crystals, H~+ ions were found to gradually transfer to the sites of 3489 cm ~(-1). These results are explained by the breakdown of the association of Hf _(Nb)~- and H ~+ ions and the subsequent redistribution of H~+ ions around Hf _(Li)~(3+) ions in V _(Li)~- -deficient lattice. Additionally, the link between the intrinsic defects and how they influence the optical-damage threshold upon adding Hf was discussed in detail.
机译:研究了全同和近化学计量的LiNbO_3:Hf晶体的OH〜-吸收带。在全同晶体中,在2〜2.5mol%的掺杂水平之间发现了OH〜-吸收带的突然蓝移,这证实了Hf掺杂的确切光学损伤阈值。一致晶体和接近化学计量的晶体之间的OH〜-吸收差表明,掺入Li后,H〜+离子不再偏爱3500 cm〜(-1)的位。而且,随着近化学计量晶体中Hf掺杂的增加,发现H〜+离子逐渐转移到3489cm〜(-1)的位置。 Hf _(Nb)〜-和H〜+离子的缔合分解以及随后的H〜+离子在V _(Li)中围绕Hf _(Li)〜(3+)离子的重新分布解释了这些结果。 〜-晶格不足。此外,还详细讨论了固有缺陷及其在添加Hf后如何影响光损伤阈值之间的联系。

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