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首页> 外文期刊>Electrochimica Acta >Electrical characterization of waterside corrosion films formed on ZrNb(1%)O(0.13%) impedance spectroscopy, zirconium alloys, oxidation, frequency-temperature equivalence, dielectric dispersion
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Electrical characterization of waterside corrosion films formed on ZrNb(1%)O(0.13%) impedance spectroscopy, zirconium alloys, oxidation, frequency-temperature equivalence, dielectric dispersion

机译:ZrNb(1%)O(0.13%)阻抗谱,锆合金,氧化,频率-温度当量,介电弥散上形成的水侧腐蚀膜的电学表征

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摘要

Oxide films formed by water oxidation at 360℃ on ZrNb(1%)O(0.13%) for several durations (50-300 days) were studied by impedance spectroscopy (IS) in gaseous atmosphere. The electrical behavior of oxide layers was investigated as a function of the temperature (25-300℃) at constant oxygen partial pressure (0.3 Pa). Cole-Cole diagrams suggest a frequency-temperature equivalence. A simple electrical model has been derived from the as-deduced 14 decade master curve. Equivalent circuit includes a series association of two layers exhibiting different dielectric properties: a dense layer near the oxide-metal interface and a porous layer at the waterside. Electronic conductivity is predominant within the whole temperature range, but ionic contribution was proposed to increase for temperature higher than 170℃. During the parabolic oxidation step, the oxide thickness of the barrier layer increases but oxide growth would not be only a geometrical one. The kinetic modification to a constant oxidation rate was observed to be correlated to the increase of the dense layer thickness. Such a behavior suggests that the mechanism controlling oxidation rate is not a pure mechanism of oxygen diffusion through this layer. Finally, a qualitative model of activated electrons transport based on an hopping mechanism was proposed in order to take into account that the Arrhenius diagrams of both total conductivity and dispersion factor are characterized by a break point with two activation energy values.
机译:通过阻抗光谱法(IS)研究了在360℃水在ZrNb(1%)O(0.13%)上多次氧化(50-300天)形成的氧化膜。在恒定氧分压(0.3 Pa)下,研究了氧化层的电行为与温度(25-300℃)的关系。科尔-科尔图表明了频率-温度等效。一个简单的电气模型已经从推导出的14十进制主曲线中得出。等效电路包括表现出不同介电特性的两层的串联关联:靠近氧化物-金属界面的致密层和位于水侧的多孔层。在整个温度范围内,电子电导率占主导地位,但建议在高于170℃的温度下增加离子贡献。在抛物线氧化步骤中,势垒层的氧化物厚度增加,但是氧化物的生长将不仅是几何上的。观察到对恒定氧化速率的动力学改性与致密层厚度的增加相关。这种行为表明,控制氧化速率的机制并非纯氧扩散通过该层的机制。最后,提出一种基于跳跃机制的活化电子输运的定性模型,以考虑到总电导率和弥散因子的阿伦尼乌斯图都以具有两个活化能值的断点为特征。

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