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首页> 外文期刊>Electrochimica Acta >Charging processes and electrocatalytic properties of IrO{sub}2/TiO{sub}2/SnO{sub}2 oxide films investigated by in situ AC impedance measurements
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Charging processes and electrocatalytic properties of IrO{sub}2/TiO{sub}2/SnO{sub}2 oxide films investigated by in situ AC impedance measurements

机译:通过原位交流阻抗测量研究IrO {sub} 2 / TiO {sub} 2 / SnO {sub} 2氧化物薄膜的充电过程和电催化性能

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The electrochemical characteristics of thermally prepared oxide films of nominal composition Ir{sub}0.3Ti{sub}(0.7-x)Sn{sub}xO{sub}2 were examined as a function of x by ac impedance measurements. For potential values in the double layer region,the impedance behavior observed at low frequency was attributed to the double layer capacitance of the oxide/ electrolyte interface, while at high frequency it was attributed to a mass transport limited process occurring in difficult-to-access oxideregions. The main source of ohmic resistance of the system is the solution resistance and low proton transport, necessary for the Ir(III)/Ir(IV) redox transitions to occur in more difficult to reach oxide regions. The electrocatalytic properties as afunction of composition, studied using the OER in 1.0 mol dm{sup}-3 HClO{sub}4 as a model reaction, revealed ternary mixture have slightly superior real catalytic properties when compared to the binary mixtures. The behavior of the charging processes as a function of composition was analyzed based on the double layer parameters.
机译:通过交流阻抗测量,检查了标称组成为Ir {sub} 0.3Ti {sub}(0.7-x)Sn {sub} xO {sub} 2的热制备氧化膜的电化学特性。对于双层区域中的电势值,在低频下观察到的阻抗行为归因于氧化物/电解质界面的双层电容,而在高频下则归因于在难以接近中发生的传质受限过程氧化物区域。系统欧姆电阻的主要来源是溶液电阻和低质子传输,这是Ir(III)/ Ir(IV)氧化还原转变在较难到达的氧化物区域发生的必要条件。使用1.0 mol dm {sup} -3 HClO {sub} 4中的OER作为模型反应研究的电催化性能随组成的变化,表明三元混合物与二元混合物相比,其真实的催化性能稍好。基于双层参数分析了充电过程的行为与组成的关系。

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