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DISLOCATION CORE STRUCTURES AND MOBILITIES IN MoSi_2

机译:错位核心结构和MoSi_2的移动性

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摘要

Using a modified version of the embedded atom method (EAM) that includes angular forces, potentials are developed for MoSi_2. The potentials describe the structural and elastic properties in reasonable agreement with experiment. These potentials are used to calculate the core Structures and resistance to glide for four straight dislocations that are observed in MoSi_2. In contrast to previous calculations in materials with simple crystal Structures, such as face-centered cubic metals, it was necessary to use molecular dynamics at elevated temperature to obtain any dislocation mobility. It is found that only one of the dislocations, a/2(110) with predominantly edge character, has any significant mobility at reasonable stresses. In one case, the dislocation dissociates into seven partials at high shear Strain and the response is asymmetric with respect to the direction of the applied shear Strain.
机译:使用包含角力的嵌入原子方法(EAM)的修改版本,开发了MoSi_2势。电位描述了结构和弹性性能,与实验相当吻合。这些电位用于计算在MoSi_2中观察到的四个直线位错的核心结构和滑动阻力。与以前对具有简单晶体结构的材料(例如面心立方金属)的计算相比,有必要在高温下使用分子动力学来获得任何位错迁移率。结果发现,只有一个位错,即以边缘特征为主的位错a/2(110)在合理应力下具有显著的迁移率。在一种情况下,位错在高剪切应变下解离成七个部分,并且响应相对于施加的剪切应变的方向是不对称的。

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