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MOCVD of hard metallurgical coatings: Examples in the Cr-C-N system

机译:硬质冶金涂层的MOCVD:Cr-C-N系统中的示例

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All individual phases of the ternary Cr-C-N system including stable and metastable ones can be deposited at low temperature by metalorganic chemical vapor deposition (MOCVD). These growth processes are mainly based on the use of bis(benzene)chromium as chromium source and various co-reactives. Then, from a good control of the reactive gas phase, it is possible to combine these MOCVD processes to grow in the same reactor protective coatings designed with a complex architecture based on polyphased, nanostructured or multilayer structure which exhibit enhanced properties. These deposition processes are described and the main features of the coatings are discussed.
机译:Cr-C-N三元体系的所有单个相,包括稳定相和亚稳态相,都可以通过金属有机化学气相沉积(MOCVD)在低温下沉积。这些生长过程主要基于使用双(苯)铬作为铬源和各种共反应物。然后,通过对反应性气相的良好控制,可以将这些MOCVD工艺组合在一起,在同一反应器保护涂层中生长,该保护涂层的设计基于具有增强性能的多相,纳米结构或多层结构,结构复杂。描述了这些沉积过程并讨论了涂层的主要特征。

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